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MATSUKI ME08N20-G
| Manufacturer | |
| Mfr. Part # | ME08N20-G |
| EBEE Part # | E8709728 |
| Package | TO-252-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 9A 350mΩ@10V,5A 74.9W 4V@250uA 1 N-channel TO-252-3 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>2130 In Stock for Fast Shipping
2130 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3182 | $ 1.5910 |
| 50+ | $0.2528 | $ 12.6400 |
| 150+ | $0.2248 | $ 33.7200 |
| 500+ | $0.1899 | $ 94.9500 |
| 2500+ | $0.1743 | $ 435.7500 |
| 5000+ | $0.1650 | $ 825.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | MATSUKI ME08N20-G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 9A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 350mΩ@10V,5A | |
| Power Dissipation (Pd) | 74.9W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF@25V | |
| Input Capacitance (Ciss@Vds) | 2.61nF@25V | |
| Total Gate Charge (Qg@Vgs) | 51.7nC@10V |
Shopping Guide
Expand
2130 Stock for Shipping Fast
2130 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3182 | $ 1.5910 |
| 50+ | $0.2528 | $ 12.6400 |
| 150+ | $0.2248 | $ 33.7200 |
| 500+ | $0.1899 | $ 94.9500 |
| 2500+ | $0.1743 | $ 435.7500 |
| 5000+ | $0.1650 | $ 825.0000 |
Best price for more quantity?
$
