| Manufacturer | |
| Mfr. Part # | LSGE06R046HWB |
| EBEE Part # | E82836186 |
| Package | TO-263-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 104A 4.6mΩ@10V,20A 89W 4V@250uA TO-263-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7405 | $ 0.7405 |
| 10+ | $0.6141 | $ 6.1410 |
| 30+ | $0.5527 | $ 16.5810 |
| 100+ | $0.4894 | $ 48.9400 |
| 500+ | $0.4516 | $ 225.8000 |
| 800+ | $0.4336 | $ 346.8800 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | LONTEN LSGE06R046HWB | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | - | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 104A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.6mΩ@10V,20A | |
| Power Dissipation (Pd) | 89W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF@30V | |
| Input Capacitance (Ciss@Vds) | 3511pF@30V | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7405 | $ 0.7405 |
| 10+ | $0.6141 | $ 6.1410 |
| 30+ | $0.5527 | $ 16.5810 |
| 100+ | $0.4894 | $ 48.9400 |
| 500+ | $0.4516 | $ 225.8000 |
| 800+ | $0.4336 | $ 346.8800 |
