| Manufacturer | |
| Mfr. Part # | FQD10N65SE |
| EBEE Part # | E842404734 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1916 | $ 0.9580 |
| 50+ | $0.1673 | $ 8.3650 |
| 150+ | $0.1569 | $ 23.5350 |
| 500+ | $0.1439 | $ 71.9500 |
| 2500+ | $0.1382 | $ 345.5000 |
| 5000+ | $0.1347 | $ 673.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | KTP FQD10N65SE | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 900mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 45W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.5nF | |
| Output Capacitance(Coss) | 194pF | |
| Gate Charge(Qg) | 35nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1916 | $ 0.9580 |
| 50+ | $0.1673 | $ 8.3650 |
| 150+ | $0.1569 | $ 23.5350 |
| 500+ | $0.1439 | $ 71.9500 |
| 2500+ | $0.1382 | $ 345.5000 |
| 5000+ | $0.1347 | $ 673.5000 |
