| Manufacturer | |
| Mfr. Part # | STD12NE06-JSM |
| EBEE Part # | E818194750 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | 60V 20A 36mΩ@10V,10A 31W 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3531 | $ 0.3531 |
| 200+ | $0.1409 | $ 28.1800 |
| 500+ | $0.1362 | $ 68.1000 |
| 1000+ | $0.1339 | $ 133.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | JSMSEMI STD12NE06-JSM | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@10V,10A | |
| Power Dissipation (Pd) | 31W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.15nF@25V | |
| Total Gate Charge (Qg@Vgs) | 20.3nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3531 | $ 0.3531 |
| 200+ | $0.1409 | $ 28.1800 |
| 500+ | $0.1362 | $ 68.1000 |
| 1000+ | $0.1339 | $ 133.9000 |
