| Manufacturer | |
| Mfr. Part # | IVST12050SA1L |
| EBEE Part # | E85806860 |
| Package | SOT-227 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 1.2kV 64A 413W 50mΩ@20V,20A 3.2V@6mA 1 N-channel SOT-227 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $37.3986 | $ 37.3986 |
| 3+ | $36.7820 | $ 110.3460 |
| 30+ | $34.9319 | $ 1047.9570 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | InventChip IVST12050SA1L | |
| RoHS | ||
| RDS(on) | 50mΩ@20V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 413W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| Current - Continuous Drain(Id) | 64A | |
| Ciss-Input Capacitance | 2.75nF |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $37.3986 | $ 37.3986 |
| 3+ | $36.7820 | $ 110.3460 |
| 30+ | $34.9319 | $ 1047.9570 |
