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InventChip IVST12050MA1L
| Manufacturer | |
| Mfr. Part # | IVST12050MA1L |
| EBEE Part # | E85806859 |
| Package | SOT-227 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 1.2kV 64A 413W 50mΩ@20V,20A 2.2V@6mA 1 N-channel SOT-227 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $47.2491 | $ 47.2491 |
| 3+ | $43.2058 | $ 129.6174 |
| 30+ | $41.0002 | $ 1230.0060 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | InventChip IVST12050MA1L | |
| RoHS | ||
| RDS(on) | 65mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.6pF | |
| Pd - Power Dissipation | 413W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 64A | |
| Ciss-Input Capacitance | 2.7nF | |
| Output Capacitance(Coss) | 217pF | |
| Gate Charge(Qg) | 120nC |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $47.2491 | $ 47.2491 |
| 3+ | $43.2058 | $ 129.6174 |
| 30+ | $41.0002 | $ 1230.0060 |
