| Manufacturer | |
| Mfr. Part # | IV2Q12030D7Z |
| EBEE Part # | E822368193 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-263-7 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.0156 | $ 18.0156 |
| 10+ | $17.1527 | $ 171.5270 |
| 30+ | $15.6583 | $ 469.7490 |
| 100+ | $14.3555 | $ 1435.5500 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | InventChip IV2Q12030D7Z | |
| RoHS | ||
| RDS(on) | 39mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Pd - Power Dissipation | 395W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 79A | |
| Ciss-Input Capacitance | 3nF | |
| Output Capacitance(Coss) | 140pF | |
| Gate Charge(Qg) | 135nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $18.0156 | $ 18.0156 |
| 10+ | $17.1527 | $ 171.5270 |
| 30+ | $15.6583 | $ 469.7490 |
| 100+ | $14.3555 | $ 1435.5500 |
