| Manufacturer | |
| Mfr. Part # | IV2Q12017T4Z |
| EBEE Part # | E822368200 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $28.9390 | $ 28.9390 |
| 30+ | $27.9356 | $ 838.0680 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | InventChip IV2Q12017T4Z | |
| RoHS | ||
| RDS(on) | 22mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.3pF | |
| Pd - Power Dissipation | 469W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 118A | |
| Ciss-Input Capacitance | 4.41nF | |
| Output Capacitance(Coss) | 211pF | |
| Gate Charge(Qg) | 214nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $28.9390 | $ 28.9390 |
| 30+ | $27.9356 | $ 838.0680 |
