| Manufacturer | |
| Mfr. Part # | IRFB4110PBF |
| EBEE Part # | E82650 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 180A 4.5mΩ@10V,75A 370W 4V@250uA 1 N-Channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7463 | $ 0.7463 |
| 10+ | $0.6478 | $ 6.4780 |
| 50+ | $0.5161 | $ 25.8050 |
| 100+ | $0.4589 | $ 45.8900 |
| 600+ | $0.4398 | $ 263.8800 |
| 900+ | $0.4287 | $ 385.8300 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Infineon Technologies IRFB4110PBF | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 4.5mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 370W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 180A | |
| Ciss-Input Capacitance | 9.62nF | |
| Output Capacitance(Coss) | 670pF | |
| Gate Charge(Qg) | 210nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7463 | $ 0.7463 |
| 10+ | $0.6478 | $ 6.4780 |
| 50+ | $0.5161 | $ 25.8050 |
| 100+ | $0.4589 | $ 45.8900 |
| 600+ | $0.4398 | $ 263.8800 |
| 900+ | $0.4287 | $ 385.8300 |
