| Manufacturer | |
| Mfr. Part # | IPDD60R090CFD7XTMA1 |
| EBEE Part # | E83278513 |
| Package | HDSOP-10 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 21A 227W 90mΩ@10V,9.3A [email protected] 1 N-channel HDSOP-10 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.5299 | $ 6.5299 |
| 200+ | $2.5286 | $ 505.7200 |
| 500+ | $2.4381 | $ 1219.0500 |
| 1000+ | $2.3956 | $ 2395.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Infineon IPDD60R090CFD7XTMA1 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 21A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 90mΩ@10V,9.3A | |
| Power Dissipation (Pd) | 227W | |
| Gate Threshold Voltage (Vgs(th)@Id) | [email protected] | |
| Reverse Transfer Capacitance (Crss@Vds) | 612pF@400V | |
| Input Capacitance (Ciss@Vds) | 1.747nF@400V | |
| Total Gate Charge (Qg@Vgs) | 42nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.5299 | $ 6.5299 |
| 200+ | $2.5286 | $ 505.7200 |
| 500+ | $2.4381 | $ 1219.0500 |
| 1000+ | $2.3956 | $ 2395.6000 |
