| Manufacturer | |
| Mfr. Part # | IDH04G65C6XKSA1 |
| EBEE Part # | E86577446 |
| Package | TO-220-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 1.35V@4A 12A TO-220-2 SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | Infineon Technologies IDH04G65C6XKSA1 | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 14uA@420V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.35V@4A | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 29A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
