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HXY MOSFET US1G


Manufacturer
Mfr. Part #
US1G
EBEE Part #
E85199105
Package
SMA
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
1.3V@1A 50ns Independent Type 1A 400V SMA Fast Recovery / High Efficiency Diodes ROHS
This materials supports customized cables!
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10520 In Stock for Fast Shipping
10520 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
20+$0.0093$ 0.1860
200+$0.0073$ 1.4600
600+$0.0062$ 3.7200
2000+$0.0054$ 10.8000
10000+$0.0048$ 48.0000
20000+$0.0045$ 90.0000
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TypeDescription
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CategoryDiodes ,Fast Recovery / High Efficiency Diodes
DatasheetHXY MOSFET US1G
RoHS
Reverse Leakage Current (Ir)5uA@400V
Diode ConfigurationIndependent
Reverse Recovery Time (trr)50ns
Voltage - DC Reverse (Vr) (Max)400V
Voltage - Forward(Vf@If)1.3V@1A
Current - Rectified1A
Non-Repetitive Peak Forward Surge Current30A
Operating Junction Temperature Range-55℃~+150℃

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