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HXY MOSFET HC4D20120D


Manufacturer
Mfr. Part #
HC4D20120D
EBEE Part #
E819723888
Package
TO-247-3L
Customer #
Datasheet
EDA Models
ECCN
-
Description
1.2kV 1 pair of common cathodes 1.5V@10A TO-247-3L SiC Diodes ROHS
This materials supports customized cables!
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49 In Stock for Fast Shipping
49 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.6201$ 2.6201
10+$2.2457$ 22.4570
30+$1.9817$ 59.4510
90+$1.7572$ 158.1480
510+$1.6526$ 842.8260
990+$1.6061$ 1590.0390
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC4D20120D
RoHS
Reverse Leakage Current (Ir)250uA@1200V
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.5V@10A
Current - Rectified34A
Operating Junction Temperature Range-55℃~+175℃

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