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HXY MOSFET HC4D08120A


Manufacturer
Mfr. Part #
HC4D08120A
EBEE Part #
E819723883
Package
TO-220-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
1.2kV Independent Type 1.5V@8A TO-220-2L SiC Diodes ROHS
This materials supports customized cables!
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14 In Stock for Fast Shipping
14 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.2700$ 1.2700
10+$1.0788$ 10.7880
50+$0.9330$ 46.6500
100+$0.8110$ 81.1000
500+$0.7549$ 377.4500
1000+$0.7312$ 731.2000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC4D08120A
RoHS
Reverse Leakage Current (Ir)250uA@1200V
Diode ConfigurationIndependent
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.5V@8A
Non-Repetitive Peak Forward Surge Current64A
Operating Junction Temperature Range-55℃~+175℃

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