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HXY MOSFET HC3D10065E


Manufacturer
Mfr. Part #
HC3D10065E
EBEE Part #
E822449557
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
650V Independent Type 1.3V@10A TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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121 In Stock for Fast Shipping
121 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.2467$ 2.2467
10+$1.9100$ 19.1000
30+$1.6990$ 50.9700
100+$1.4824$ 148.2400
500+$1.3860$ 693.0000
1000+$1.3427$ 1342.7000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC3D10065E
RoHS
Reverse Leakage Current (Ir)50uA@650V
Diode Configuration1 Independent
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.3V@10A
Current - Rectified30A
Non-Repetitive Peak Forward Surge Current80A
Operating Junction Temperature Range-55℃~+175℃

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