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HXY MOSFET HC3D05120E


Manufacturer
Mfr. Part #
HC3D05120E
EBEE Part #
E822449567
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
1200V Independent Type 1.4V@5A TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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778 In Stock for Fast Shipping
778 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.3409$ 2.3409
10+$1.9809$ 19.8090
30+$1.7553$ 52.6590
100+$1.5252$ 152.5200
500+$1.4207$ 710.3500
1000+$1.3758$ 1375.8000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC3D05120E
RoHS
Reverse Leakage Current (Ir)100uA@1200V
Diode ConfigurationIndependent
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.4V@5A
Current - Rectified18A
Non-Repetitive Peak Forward Surge Current45A
Operating Junction Temperature Range-55℃~+175℃

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