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HXY MOSFET HC3D04065E


Manufacturer
Mfr. Part #
HC3D04065E
EBEE Part #
E822449553
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
650V Independent Type 1.3V@4A TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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403 In Stock for Fast Shipping
403 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.8948$ 0.8948
10+$0.7486$ 7.4860
30+$0.6668$ 20.0040
100+$0.5759$ 57.5900
500+$0.5351$ 267.5500
1000+$0.5166$ 516.6000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC3D04065E
RoHS
Reverse Leakage Current (Ir)50uA@650V
Diode ConfigurationIndependent
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.3V@4A
Current - Rectified14A
Non-Repetitive Peak Forward Surge Current36A
Operating Junction Temperature Range-55℃~+175℃

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