17% off
| Manufacturer | |
| Mfr. Part # | HC3D04065E |
| EBEE Part # | E822449553 |
| Package | TO-252-2L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V Independent Type 1.3V@4A TO-252-2L SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8948 | $ 0.8948 |
| 10+ | $0.7486 | $ 7.4860 |
| 30+ | $0.6668 | $ 20.0040 |
| 100+ | $0.5759 | $ 57.5900 |
| 500+ | $0.5351 | $ 267.5500 |
| 1000+ | $0.5166 | $ 516.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | HXY MOSFET HC3D04065E | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Diode Configuration | Independent | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@4A | |
| Current - Rectified | 14A | |
| Non-Repetitive Peak Forward Surge Current | 36A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8948 | $ 0.8948 |
| 10+ | $0.7486 | $ 7.4860 |
| 30+ | $0.6668 | $ 20.0040 |
| 100+ | $0.5759 | $ 57.5900 |
| 500+ | $0.5351 | $ 267.5500 |
| 1000+ | $0.5166 | $ 516.6000 |
