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HXY MOSFET HC3D02120E


Manufacturer
Mfr. Part #
HC3D02120E
EBEE Part #
E822449566
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
1200V Independent Type 1.35V@2A TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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257 In Stock for Fast Shipping
257 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.6300$ 1.6300
10+$1.3804$ 13.8040
30+$1.2228$ 36.6840
100+$1.0628$ 106.2800
500+$0.9899$ 494.9500
1000+$0.9578$ 957.8000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC3D02120E
RoHS
Reverse Leakage Current (Ir)1uA@1200V
Diode ConfigurationIndependent
Voltage - DC Reverse (Vr) (Max)1.2kV
Voltage - Forward(Vf@If)1.35V@2A
Non-Repetitive Peak Forward Surge Current24A
Operating Junction Temperature Range-55℃~+175℃

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