15% off
| Manufacturer | |
| Mfr. Part # | HC1D08065N |
| EBEE Part # | E841428798 |
| Package | QPFN-8(5x6) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | QPFN-8(5x6) SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4218 | $ 3.4218 |
| 10+ | $2.9256 | $ 29.2560 |
| 30+ | $2.6305 | $ 78.9150 |
| 100+ | $2.3315 | $ 233.1500 |
| 500+ | $2.1939 | $ 1096.9500 |
| 1000+ | $2.1317 | $ 2131.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | HXY MOSFET HC1D08065N | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.55V@8A | |
| Current - Rectified | 30A | |
| Non-Repetitive Peak Forward Surge Current | 55A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4218 | $ 3.4218 |
| 10+ | $2.9256 | $ 29.2560 |
| 30+ | $2.6305 | $ 78.9150 |
| 100+ | $2.3315 | $ 233.1500 |
| 500+ | $2.1939 | $ 1096.9500 |
| 1000+ | $2.1317 | $ 2131.7000 |
