| Manufacturer | |
| Mfr. Part # | HC1D08065F |
| EBEE Part # | E841428794 |
| Package | TO-220F-2L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220F-2L SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7077 | $ 1.7077 |
| 10+ | $1.4462 | $ 14.4620 |
| 50+ | $1.2812 | $ 64.0600 |
| 100+ | $1.1131 | $ 111.3100 |
| 500+ | $1.0368 | $ 518.4000 |
| 1000+ | $1.0041 | $ 1004.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | HXY MOSFET HC1D08065F | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@8A | |
| Current - Rectified | 19A | |
| Non-Repetitive Peak Forward Surge Current | 64A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7077 | $ 1.7077 |
| 10+ | $1.4462 | $ 14.4620 |
| 50+ | $1.2812 | $ 64.0600 |
| 100+ | $1.1131 | $ 111.3100 |
| 500+ | $1.0368 | $ 518.4000 |
| 1000+ | $1.0041 | $ 1004.1000 |
