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HXY MOSFET HC1D08065E


Manufacturer
Mfr. Part #
HC1D08065E
EBEE Part #
E841428786
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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192 In Stock for Fast Shipping
192 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.5489$ 1.5489
10+$1.2964$ 12.9640
30+$1.1577$ 34.7310
100+$1.0011$ 100.1100
500+$0.9318$ 465.9000
1000+$0.8993$ 899.3000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC1D08065E
RoHS
Reverse Leakage Current (Ir)50uA@650V
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.3V@8A
Current - Rectified30A
Non-Repetitive Peak Forward Surge Current64A
Operating Junction Temperature Range-55℃~+175℃

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