| Manufacturer | |
| Mfr. Part # | HC1D06065N |
| EBEE Part # | E841428799 |
| Package | QPFN-8(5x6) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | QPFN-8(5x6) SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8451 | $ 0.8451 |
| 10+ | $0.6824 | $ 6.8240 |
| 30+ | $0.6010 | $ 18.0300 |
| 100+ | $0.5212 | $ 52.1200 |
| 500+ | $0.4617 | $ 230.8500 |
| 1000+ | $0.4367 | $ 436.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | HXY MOSFET HC1D06065N | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@6A | |
| Current - Rectified | 23A | |
| Non-Repetitive Peak Forward Surge Current | 48A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8451 | $ 0.8451 |
| 10+ | $0.6824 | $ 6.8240 |
| 30+ | $0.6010 | $ 18.0300 |
| 100+ | $0.5212 | $ 52.1200 |
| 500+ | $0.4617 | $ 230.8500 |
| 1000+ | $0.4367 | $ 436.7000 |
