20% off
| Manufacturer | |
| Mfr. Part # | HC1D04065F |
| EBEE Part # | E841428795 |
| Package | TO-220F-2L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220F-2L SiC Diodes ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9628 | $ 0.9628 |
| 10+ | $0.8078 | $ 8.0780 |
| 50+ | $0.7126 | $ 35.6300 |
| 100+ | $0.6161 | $ 61.6100 |
| 500+ | $0.5742 | $ 287.1000 |
| 1000+ | $0.5538 | $ 553.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datasheet | HXY MOSFET HC1D04065F | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 10uA@650V | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@4A | |
| Current - Rectified | 10A | |
| Non-Repetitive Peak Forward Surge Current | 36A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9628 | $ 0.9628 |
| 10+ | $0.8078 | $ 8.0780 |
| 50+ | $0.7126 | $ 35.6300 |
| 100+ | $0.6161 | $ 61.6100 |
| 500+ | $0.5742 | $ 287.1000 |
| 1000+ | $0.5538 | $ 553.8000 |
