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HXY MOSFET HC1D02065E


Manufacturer
Mfr. Part #
HC1D02065E
EBEE Part #
E841428787
Package
TO-252-2L
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-252-2L SiC Diodes ROHS
This materials supports customized cables!
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191 In Stock for Fast Shipping
191 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.6015$ 0.6015
10+$0.4842$ 4.8420
30+$0.4262$ 12.7860
100+$0.3682$ 36.8200
500+$0.3331$ 166.5500
1000+$0.3156$ 315.6000
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TypeDescription
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CategorySilicon Carbide (SiC) Devices ,SiC Diodes
DatasheetHXY MOSFET HC1D02065E
RoHS
Reverse Leakage Current (Ir)10uA@650V
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.3V@2A
Current - Rectified7.5A
Non-Repetitive Peak Forward Surge Current18A
Operating Junction Temperature Range-55℃~+175℃

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