| Manufacturer | |
| Mfr. Part # | HSU60N02 |
| EBEE Part # | E8508790 |
| Package | TO-252-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 60A 4mΩ@4.5V,30A 60W 500mV@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1829 | $ 0.1829 |
| 10+ | $0.1449 | $ 1.4490 |
| 30+ | $0.1286 | $ 3.8580 |
| 100+ | $0.1083 | $ 10.8300 |
| 500+ | $0.0992 | $ 49.6000 |
| 1000+ | $0.0938 | $ 93.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HUASHUO HSU60N02 | |
| RoHS | ||
| RDS(on) | 4mΩ@4.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 500mV | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.2nF | |
| Gate Charge(Qg) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.1829 | $ 0.1829 |
| 10+ | $0.1449 | $ 1.4490 |
| 30+ | $0.1286 | $ 3.8580 |
| 100+ | $0.1083 | $ 10.8300 |
| 500+ | $0.0992 | $ 49.6000 |
| 1000+ | $0.0938 | $ 93.8000 |
