| Manufacturer | |
| Mfr. Part # | HSP6016 |
| EBEE Part # | E8508810 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 60A 86.8W 12mΩ@10V,60A 1.2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3422 | $ 1.7110 |
| 50+ | $0.2521 | $ 12.6050 |
| 150+ | $0.2225 | $ 33.3750 |
| 500+ | $0.1855 | $ 92.7500 |
| 2000+ | $0.1691 | $ 338.2000 |
| 5000+ | $0.1592 | $ 796.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HUASHUO HSP6016 | |
| RoHS | ||
| RDS(on) | 12mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 86.8W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 3.24nF | |
| Gate Charge(Qg) | [email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3422 | $ 1.7110 |
| 50+ | $0.2521 | $ 12.6050 |
| 150+ | $0.2225 | $ 33.3750 |
| 500+ | $0.1855 | $ 92.7500 |
| 2000+ | $0.1691 | $ 338.2000 |
| 5000+ | $0.1592 | $ 796.0000 |
