| Manufacturer | |
| Mfr. Part # | HSBG2103 |
| EBEE Part # | E8845598 |
| Package | DFN1006-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 650mA 520mΩ@4.5V,650mA 150mW 1V@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0465 | $ 0.4650 |
| 100+ | $0.0380 | $ 3.8000 |
| 300+ | $0.0336 | $ 10.0800 |
| 1000+ | $0.0304 | $ 30.4000 |
| 5000+ | $0.0245 | $ 122.5000 |
| 10000+ | $0.0231 | $ 231.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | HUASHUO HSBG2103 | |
| RoHS | ||
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 650mA | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 520mΩ@4.5V,650mA | |
| Power Dissipation (Pd) | 150mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0465 | $ 0.4650 |
| 100+ | $0.0380 | $ 3.8000 |
| 300+ | $0.0336 | $ 10.0800 |
| 1000+ | $0.0304 | $ 30.4000 |
| 5000+ | $0.0245 | $ 122.5000 |
| 10000+ | $0.0231 | $ 231.0000 |
