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HUASHUO HSBG2103


Manufacturer
Mfr. Part #
HSBG2103
EBEE Part #
E8845598
Package
DFN1006-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
20V 650mA 520mΩ@4.5V,650mA 150mW 1V@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS
This materials supports customized cables!
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6752 In Stock for Fast Shipping
6752 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
10+$0.0465$ 0.4650
100+$0.0380$ 3.8000
300+$0.0336$ 10.0800
1000+$0.0304$ 30.4000
5000+$0.0245$ 122.5000
10000+$0.0231$ 231.0000
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TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetHUASHUO HSBG2103
RoHS
Type1 Piece P-Channel
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)650mA
Drain Source On Resistance (RDS(on)@Vgs,Id)520mΩ@4.5V,650mA
Power Dissipation (Pd)150mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA

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