| Manufacturer | |
| Mfr. Part # | HCF65R1K0 |
| EBEE Part # | E819725796 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 800mΩ@10V,2A 26W 4V@250uA 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2601 | $ 0.2601 |
| 10+ | $0.2259 | $ 2.2590 |
| 50+ | $0.2103 | $ 10.5150 |
| 100+ | $0.1916 | $ 19.1600 |
| 500+ | $0.1823 | $ 91.1500 |
| 1000+ | $0.1776 | $ 177.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HUAKE HCF65R1K0 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 800mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 26W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 330pF | |
| Output Capacitance(Coss) | 370pF | |
| Gate Charge(Qg) | 10.2nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2601 | $ 0.2601 |
| 10+ | $0.2259 | $ 2.2590 |
| 50+ | $0.2103 | $ 10.5150 |
| 100+ | $0.1916 | $ 19.1600 |
| 500+ | $0.1823 | $ 91.1500 |
| 1000+ | $0.1776 | $ 177.6000 |
