| Manufacturer | |
| Mfr. Part # | HT100NF80ASZ |
| EBEE Part # | E82874956 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 80V 100A 8mΩ@10V,37.5A 173W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7646 | $ 0.7646 |
| 10+ | $0.6353 | $ 6.3530 |
| 30+ | $0.5691 | $ 17.0730 |
| 100+ | $0.5045 | $ 50.4500 |
| 500+ | $0.4099 | $ 204.9500 |
| 1000+ | $0.3894 | $ 389.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | HTCSEMI HT100NF80ASZ | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 8mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 173W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.38nF | |
| Output Capacitance(Coss) | 1.22nF | |
| Gate Charge(Qg) | 105nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7646 | $ 0.7646 |
| 10+ | $0.6353 | $ 6.3530 |
| 30+ | $0.5691 | $ 17.0730 |
| 100+ | $0.5045 | $ 50.4500 |
| 500+ | $0.4099 | $ 204.9500 |
| 1000+ | $0.3894 | $ 389.4000 |
