| Manufacturer | |
| Mfr. Part # | HB3510P |
| EBEE Part # | E8271448 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 50A 110W 38mΩ@10V,15A 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3503 | $ 1.7515 |
| 50+ | $0.2763 | $ 13.8150 |
| 150+ | $0.2476 | $ 37.1400 |
| 500+ | $0.2117 | $ 105.8500 |
| 2500+ | $0.1957 | $ 489.2500 |
| 5000+ | $0.1861 | $ 930.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | HL(Haolin Elec) HB3510P | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 50A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 38mΩ@10V,15A | |
| Power Dissipation (Pd) | 110W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF@25V | |
| Input Capacitance (Ciss@Vds) | 1489pF | |
| Total Gate Charge (Qg@Vgs) | 60nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3503 | $ 1.7515 |
| 50+ | $0.2763 | $ 13.8150 |
| 150+ | $0.2476 | $ 37.1400 |
| 500+ | $0.2117 | $ 105.8500 |
| 2500+ | $0.1957 | $ 489.2500 |
| 5000+ | $0.1861 | $ 930.5000 |
