| Manufacturer | |
| Mfr. Part # | HB100N08 |
| EBEE Part # | E82149758 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 82V 100A 6.5mΩ@10V,40A 147W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5718 | $ 0.5718 |
| 10+ | $0.4738 | $ 4.7380 |
| 50+ | $0.4102 | $ 20.5100 |
| 100+ | $0.3631 | $ 36.3100 |
| 500+ | $0.3322 | $ 166.1000 |
| 1000+ | $0.3176 | $ 317.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | HL(Haolin Elec) HB100N08 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 82V | |
| Continuous Drain Current (Id) | 100A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.5mΩ@10V,40A | |
| Power Dissipation (Pd) | 147W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF@25V | |
| Input Capacitance (Ciss@Vds) | 5.053nF@25V | |
| Total Gate Charge (Qg@Vgs) | 115nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5718 | $ 0.5718 |
| 10+ | $0.4738 | $ 4.7380 |
| 50+ | $0.4102 | $ 20.5100 |
| 100+ | $0.3631 | $ 36.3100 |
| 500+ | $0.3322 | $ 166.1000 |
| 1000+ | $0.3176 | $ 317.6000 |
