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HARRIS RF1S630SM


Manufacturer
Mfr. Part #
RF1S630SM
EBEE Part #
E83291186
Package
TO-263AB
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
200V 6A 400mΩ@10V,5A 75W 4V@250uA 1 N-channel TO-263AB MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.2191$ 1.2191
200+$0.4721$ 94.4200
500+$0.4561$ 228.0500
1000+$0.4472$ 447.2000
TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetHARRIS RF1S630SM
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)6A
Drain Source On Resistance (RDS(on)@Vgs,Id)400mΩ@10V,5A
Power Dissipation (Pd)75W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Input Capacitance (Ciss@Vds)600pF@25V
Total Gate Charge (Qg@Vgs)30nC@10V

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