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HARRIS IRFD121


Manufacturer
Mfr. Part #
IRFD121
EBEE Part #
E83288358
Package
DIP-4
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
80V 1.3A 300mΩ@10V,600mA 1W 4V@250uA 1 N-channel DIP-4 MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.5342$ 0.5342
200+$0.2077$ 41.5400
500+$0.2006$ 100.3000
1000+$0.1970$ 197.0000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetHARRIS IRFD121
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)1.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@10V,600mA
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Input Capacitance (Ciss@Vds)450pF@25V
Total Gate Charge (Qg@Vgs)15nC@10V

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