| Manufacturer | |
| Mfr. Part # | IRFD121 |
| EBEE Part # | E83288358 |
| Package | DIP-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 1.3A 300mΩ@10V,600mA 1W 4V@250uA 1 N-channel DIP-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5342 | $ 0.5342 |
| 200+ | $0.2077 | $ 41.5400 |
| 500+ | $0.2006 | $ 100.3000 |
| 1000+ | $0.1970 | $ 197.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HARRIS IRFD121 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 80V | |
| Continuous Drain Current (Id) | 1.3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 300mΩ@10V,600mA | |
| Power Dissipation (Pd) | 1W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 450pF@25V | |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5342 | $ 0.5342 |
| 200+ | $0.2077 | $ 41.5400 |
| 500+ | $0.2006 | $ 100.3000 |
| 1000+ | $0.1970 | $ 197.0000 |
