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HARRIS IRFD112
| Manufacturer | |
| Mfr. Part # | IRFD112 |
| EBEE Part # | E83277847 |
| Package | DIP-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 800mA 800mΩ@10V,800mA 1W 4V@250uA 1 N-channel DIP-4 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4317 | $ 0.4317 |
| 200+ | $0.1671 | $ 33.4200 |
| 500+ | $0.1612 | $ 80.6000 |
| 1000+ | $0.1584 | $ 158.4000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HARRIS IRFD112 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 800mA | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@10V,800mA | |
| Power Dissipation (Pd) | 1W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 135pF@25V | |
| Total Gate Charge (Qg@Vgs) | 7nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4317 | $ 0.4317 |
| 200+ | $0.1671 | $ 33.4200 |
| 500+ | $0.1612 | $ 80.6000 |
| 1000+ | $0.1584 | $ 158.4000 |
