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HARRIS IRFD110
| Manufacturer | |
| Mfr. Part # | IRFD110 |
| EBEE Part # | E83288361 |
| Package | DIP-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 1A 1.3W 540mΩ@10V,600mA 4V@250uA 1 N-channel DIP-4 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6744 | $ 0.6744 |
| 200+ | $0.2609 | $ 52.1800 |
| 500+ | $0.2521 | $ 126.0500 |
| 1000+ | $0.2485 | $ 248.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HARRIS IRFD110 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 540mΩ@10V,600mA | |
| Power Dissipation (Pd) | 1.3W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 180pF@25V | |
| Total Gate Charge (Qg@Vgs) | 8.3nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6744 | $ 0.6744 |
| 200+ | $0.2609 | $ 52.1800 |
| 500+ | $0.2521 | $ 126.0500 |
| 1000+ | $0.2485 | $ 248.5000 |
