| Manufacturer | |
| Mfr. Part # | IRF645 |
| EBEE Part # | E83277640 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 250V 13A 125W 340mΩ@10V,8A 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1819 | $ 1.1819 |
| 200+ | $0.4578 | $ 91.5600 |
| 500+ | $0.4419 | $ 220.9500 |
| 1000+ | $0.4330 | $ 433.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HARRIS IRF645 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 250V | |
| Continuous Drain Current (Id) | 13A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 340mΩ@10V,8A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V | |
| Total Gate Charge (Qg@Vgs) | 59nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1819 | $ 1.1819 |
| 200+ | $0.4578 | $ 91.5600 |
| 500+ | $0.4419 | $ 220.9500 |
| 1000+ | $0.4330 | $ 433.0000 |
