| Manufacturer | |
| Mfr. Part # | IRF133 |
| EBEE Part # | E83291256 |
| Package | TO-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 12A 79W 0.23Ω@10V,12A 4V@250uA 1 N-channel TO-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8642 | $ 0.8642 |
| 200+ | $0.3355 | $ 67.1000 |
| 500+ | $0.3230 | $ 161.5000 |
| 1000+ | $0.3176 | $ 317.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | HARRIS IRF133 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 80V | |
| Continuous Drain Current (Id) | 12A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.23Ω@10V,12A | |
| Power Dissipation (Pd) | 79W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF@25V | |
| Input Capacitance (Ciss@Vds) | 600pF@25V | |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8642 | $ 0.8642 |
| 200+ | $0.3355 | $ 67.1000 |
| 500+ | $0.3230 | $ 161.5000 |
| 1000+ | $0.3176 | $ 317.6000 |
