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HARRIS GES5816


Manufacturer
Mfr. Part #
GES5816
EBEE Part #
E83201521
Package
TO-92
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
40V 500mW 100@2mA,2V 750mA NPN TO-92 Bipolar (BJT) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.3039$ 0.3039
200+$0.1176$ 23.5200
500+$0.1135$ 56.7500
1000+$0.1114$ 111.4000
TypeDescription
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CategoryTransistors/Thyristors ,Bipolar (BJT)
DatasheetHARRIS GES5816
RoHS
Operating Temperature-55℃~+135℃@(Tj)
Collector Current (Ic)750mA
Power Dissipation (Pd)500mW
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)40V
DC Current Gain (hFE@Ic,Vce)100@2mA,2V
Transition Frequency (fT)120MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@500mA,50mA
Transistor typeNPN

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