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Hangzhou Silan Microelectronics SVS20N60FJD2
| Manufacturer | |
| Mfr. Part # | SVS20N60FJD2 |
| EBEE Part # | E82761792 |
| Package | TO-220F-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 600V 20A 0.16Ω@10V,10A 45W 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>1015 In Stock for Fast Shipping
1015 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0624 | $ 1.0624 |
| 10+ | $0.8861 | $ 8.8610 |
| 50+ | $0.7495 | $ 37.4750 |
| 100+ | $0.6400 | $ 64.0000 |
| 500+ | $0.5908 | $ 295.4000 |
| 1000+ | $0.5685 | $ 568.5000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Hangzhou Silan Microelectronics SVS20N60FJD2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 190mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 45W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.174nF | |
| Gate Charge(Qg) | 39nC@10V |
Shopping Guide
Expand
1015 Stock for Shipping Fast
1015 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0624 | $ 1.0624 |
| 10+ | $0.8861 | $ 8.8610 |
| 50+ | $0.7495 | $ 37.4750 |
| 100+ | $0.6400 | $ 64.0000 |
| 500+ | $0.5908 | $ 295.4000 |
| 1000+ | $0.5685 | $ 568.5000 |
Best price for more quantity?
$
