Recommonended For You
Images are for reference only
Add to Favourites
Hangzhou Silan Microelectronics SVF6N60D
| Manufacturer | |
| Mfr. Part # | SVF6N60D |
| EBEE Part # | E868778 |
| Package | TO-252-2(DPAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 600V 6A 1.35Ω@10V,3A 125W 4V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>246 In Stock for Fast Shipping
246 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3289 | $ 3.2890 |
| 30+ | $0.2882 | $ 8.6460 |
| 100+ | $0.2369 | $ 23.6900 |
| 500+ | $0.2143 | $ 107.1500 |
| 1000+ | $0.2007 | $ 200.7000 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Hangzhou Silan Microelectronics SVF6N60D | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 1.35Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 690.7pF | |
| Output Capacitance(Coss) | 83.6pF | |
| Gate Charge(Qg) | 13.32nC@10V |
Shopping Guide
Expand
246 Stock for Shipping Fast
246 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3289 | $ 3.2890 |
| 30+ | $0.2882 | $ 8.6460 |
| 100+ | $0.2369 | $ 23.6900 |
| 500+ | $0.2143 | $ 107.1500 |
| 1000+ | $0.2007 | $ 200.7000 |
Best price for more quantity?
$
