Recommonended For You
Images are for reference only
Add to Favourites
Hangzhou Silan Microelectronics SVF4N60F
| Manufacturer | |
| Mfr. Part # | SVF4N60F |
| EBEE Part # | E828532 |
| Package | TO-220F-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 600V 4A 33W 2Ω@10V,2A 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>80 In Stock for Fast Shipping
80 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2428 | $ 1.2140 |
| 50+ | $0.1892 | $ 9.4600 |
| 150+ | $0.1662 | $ 24.9300 |
| 500+ | $0.1375 | $ 68.7500 |
| 2000+ | $0.1247 | $ 249.4000 |
| 5000+ | $0.1171 | $ 585.5000 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Hangzhou Silan Microelectronics SVF4N60F | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 33W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 433pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 13nC@10V |
Shopping Guide
Expand
80 Stock for Shipping Fast
80 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2428 | $ 1.2140 |
| 50+ | $0.1892 | $ 9.4600 |
| 150+ | $0.1662 | $ 24.9300 |
| 500+ | $0.1375 | $ 68.7500 |
| 2000+ | $0.1247 | $ 249.4000 |
| 5000+ | $0.1171 | $ 585.5000 |
Best price for more quantity?
$
