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Hangzhou Silan Microelectronics SVF12N65F
| Manufacturer | |
| Mfr. Part # | SVF12N65F |
| EBEE Part # | E818781 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 12A 51W 680mΩ@10V,6A 4V@250uA 1 N-Channel TO-220F MOSFETs ROHS |
This materials supports customized cables!
Learn more >>1456 In Stock for Fast Shipping
1456 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5302 | $ 0.5302 |
| 10+ | $0.4257 | $ 4.2570 |
| 50+ | $0.3450 | $ 17.2500 |
| 100+ | $0.2896 | $ 28.9600 |
| 500+ | $0.2643 | $ 132.1500 |
| 1000+ | $0.2501 | $ 250.1000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Hangzhou Silan Microelectronics SVF12N65F | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 640mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 51W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.39nF | |
| Output Capacitance(Coss) | 156pF | |
| Gate Charge(Qg) | 33nC@10V |
Shopping Guide
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1456 Stock for Shipping Fast
1456 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5302 | $ 0.5302 |
| 10+ | $0.4257 | $ 4.2570 |
| 50+ | $0.3450 | $ 17.2500 |
| 100+ | $0.2896 | $ 28.9600 |
| 500+ | $0.2643 | $ 132.1500 |
| 1000+ | $0.2501 | $ 250.1000 |
Best price for more quantity?
$
