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Hangzhou Silan Microelectronics SVD540T
| Manufacturer | |
| Mfr. Part # | SVD540T |
| EBEE Part # | E8393725 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 33A 34mΩ@10V,16A 130W 2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>1010 In Stock for Fast Shipping
1010 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3175 | $ 1.5875 |
| 50+ | $0.2509 | $ 12.5450 |
| 150+ | $0.2215 | $ 33.2250 |
| 500+ | $0.1848 | $ 92.4000 |
| 2000+ | $0.1685 | $ 337.0000 |
| 5000+ | $0.1587 | $ 793.5000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Hangzhou Silan Microelectronics SVD540T | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 34mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 130W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 1.239nF | |
| Output Capacitance(Coss) | 247pF | |
| Gate Charge(Qg) | 37nC@10V |
Shopping Guide
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1010 Stock for Shipping Fast
1010 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3175 | $ 1.5875 |
| 50+ | $0.2509 | $ 12.5450 |
| 150+ | $0.2215 | $ 33.2250 |
| 500+ | $0.1848 | $ 92.4000 |
| 2000+ | $0.1685 | $ 337.0000 |
| 5000+ | $0.1587 | $ 793.5000 |
Best price for more quantity?
$
