| Manufacturer | |
| Mfr. Part # | GBS65060TOA |
| EBEE Part # | E87426972 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 23A 50mΩ@10V,16.4A 192W 4.6V@1mA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4088 | $ 3.4088 |
| 10+ | $2.9139 | $ 29.1390 |
| 50+ | $2.6205 | $ 131.0250 |
| 100+ | $2.3239 | $ 232.3900 |
| 500+ | $2.1859 | $ 1092.9500 |
| 1000+ | $2.1240 | $ 2124.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | GOSEMICON GBS65060TOA | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 55mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 329W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 4.3nF | |
| Output Capacitance(Coss) | 70pF | |
| Gate Charge(Qg) | 90nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4088 | $ 3.4088 |
| 10+ | $2.9139 | $ 29.1390 |
| 50+ | $2.6205 | $ 131.0250 |
| 100+ | $2.3239 | $ 232.3900 |
| 500+ | $2.1859 | $ 1092.9500 |
| 1000+ | $2.1240 | $ 2124.0000 |
