10% off
| Manufacturer | |
| Mfr. Part # | 5N65 |
| EBEE Part # | E85807885 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 5A 36W 2.2Ω@10V,2.5A 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1696 | $ 0.8480 |
| 50+ | $0.1339 | $ 6.6950 |
| 150+ | $0.1186 | $ 17.7900 |
| 500+ | $0.0996 | $ 49.8000 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0824 | $ 412.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOODWORK 5N65 | |
| RoHS | ||
| RDS(on) | 2.2Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 36W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 623pF | |
| Gate Charge(Qg) | 15nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1696 | $ 0.8480 |
| 50+ | $0.1339 | $ 6.6950 |
| 150+ | $0.1186 | $ 17.7900 |
| 500+ | $0.0996 | $ 49.8000 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0824 | $ 412.0000 |
