20% off
| Manufacturer | |
| Mfr. Part # | 4N65F |
| EBEE Part # | E85248039 |
| Package | ITO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 36W 2Ω@10V,2A 2V@250uA 1 N-channel ITO-220AB MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1824 | $ 0.9120 |
| 50+ | $0.1397 | $ 6.9850 |
| 150+ | $0.1233 | $ 18.4950 |
| 500+ | $0.1029 | $ 51.4500 |
| 2000+ | $0.0938 | $ 187.6000 |
| 5000+ | $0.0883 | $ 441.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOODWORK 4N65F | |
| RoHS | ||
| RDS(on) | 2Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 36W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 670pF | |
| Gate Charge(Qg) | 15nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1824 | $ 0.9120 |
| 50+ | $0.1397 | $ 6.9850 |
| 150+ | $0.1233 | $ 18.4950 |
| 500+ | $0.1029 | $ 51.4500 |
| 2000+ | $0.0938 | $ 187.6000 |
| 5000+ | $0.0883 | $ 441.5000 |
