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GOODWORK 4N65


Manufacturer
Mfr. Part #
4N65
EBEE Part #
E82962211
Package
TO-252
Customer #
Datasheet
EDA Models
ECCN
-
Description
650V 4A 2.4Ω@10V,2A 33W 4V@250uA 1 N-channel TO-252-2 MOSFETs ROHS
This materials supports customized cables!
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2435 In Stock for Fast Shipping
2435 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
5+$0.0927$ 0.4635
50+$0.0807$ 4.0350
150+$0.0756$ 11.3400
500+$0.0692$ 34.6000
2500+$0.0622$ 155.5000
5000+$0.0605$ 302.5000
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetGOODWORK 4N65
RoHS
RDS(on)2.4Ω@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Pd - Power Dissipation33W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))4V
Current - Continuous Drain(Id)4A
Ciss-Input Capacitance670pF
Output Capacitance(Coss)90pF
Gate Charge(Qg)20nC@10V

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