20% off
| Manufacturer | |
| Mfr. Part # | 4N65 |
| EBEE Part # | E82962211 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 2.4Ω@10V,2A 33W 4V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0927 | $ 0.4635 |
| 50+ | $0.0807 | $ 4.0350 |
| 150+ | $0.0756 | $ 11.3400 |
| 500+ | $0.0692 | $ 34.6000 |
| 2500+ | $0.0622 | $ 155.5000 |
| 5000+ | $0.0605 | $ 302.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOODWORK 4N65 | |
| RoHS | ||
| RDS(on) | 2.4Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 33W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 670pF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 20nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.0927 | $ 0.4635 |
| 50+ | $0.0807 | $ 4.0350 |
| 150+ | $0.0756 | $ 11.3400 |
| 500+ | $0.0692 | $ 34.6000 |
| 2500+ | $0.0622 | $ 155.5000 |
| 5000+ | $0.0605 | $ 302.5000 |
