15% off
| Manufacturer | |
| Mfr. Part # | 20N65F |
| EBEE Part # | E85807888 |
| Package | ITO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 20A 0.35Ω@10V,10A 167W 2V@250uA 1 N-channel ITO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5783 | $ 0.5783 |
| 10+ | $0.4639 | $ 4.6390 |
| 50+ | $0.3922 | $ 19.6100 |
| 100+ | $0.3350 | $ 33.5000 |
| 500+ | $0.3018 | $ 150.9000 |
| 1000+ | $0.2845 | $ 284.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOODWORK 20N65F | |
| RoHS | ||
| RDS(on) | 350mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 167W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.978nF | |
| Gate Charge(Qg) | 80nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5783 | $ 0.5783 |
| 10+ | $0.4639 | $ 4.6390 |
| 50+ | $0.3922 | $ 19.6100 |
| 100+ | $0.3350 | $ 33.5000 |
| 500+ | $0.3018 | $ 150.9000 |
| 1000+ | $0.2845 | $ 284.5000 |
