10% off
| Manufacturer | |
| Mfr. Part # | 12N65F |
| EBEE Part # | E82922158 |
| Package | ITO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 12A 0.67Ω@10V,6A 55W 2V@250uA 1 N-channel ITO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4399 | $ 0.4399 |
| 10+ | $0.3502 | $ 3.5020 |
| 50+ | $0.2904 | $ 14.5200 |
| 100+ | $0.2420 | $ 24.2000 |
| 500+ | $0.2207 | $ 110.3500 |
| 1000+ | $0.2079 | $ 207.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOODWORK 12N65F | |
| RoHS | ||
| RDS(on) | 804mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 2.107nF | |
| Output Capacitance(Coss) | 195pF | |
| Gate Charge(Qg) | 58nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4399 | $ 0.4399 |
| 10+ | $0.3502 | $ 3.5020 |
| 50+ | $0.2904 | $ 14.5200 |
| 100+ | $0.2420 | $ 24.2000 |
| 500+ | $0.2207 | $ 110.3500 |
| 1000+ | $0.2079 | $ 207.9000 |
