15% off
| Manufacturer | |
| Mfr. Part # | GC20N65FD |
| EBEE Part # | E85259052 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 20A 167mΩ@10V,10A 40W 3V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3188 | $ 1.3188 |
| 10+ | $1.1155 | $ 11.1550 |
| 50+ | $0.9891 | $ 49.4550 |
| 100+ | $0.8586 | $ 85.8600 |
| 500+ | $0.8007 | $ 400.3500 |
| 1000+ | $0.7751 | $ 775.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | GOFORD GC20N65FD | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 167mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.729nF | |
| Output Capacitance(Coss) | 41pF | |
| Gate Charge(Qg) | 39nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3188 | $ 1.3188 |
| 10+ | $1.1155 | $ 11.1550 |
| 50+ | $0.9891 | $ 49.4550 |
| 100+ | $0.8586 | $ 85.8600 |
| 500+ | $0.8007 | $ 400.3500 |
| 1000+ | $0.7751 | $ 775.1000 |
